Product Datasheet Search Results:

VP0610T.pdf2 Pages, 103 KB, Scan
VP0610T
Calogic
P-Channel Enhancement-Mode MOS Transistors, VP0610 Series
VP0610T.pdf1 Pages, 84 KB, Scan
VP0610T
N/a
Shortform Datasheet & Cross References Data
VP0610T.pdf4 Pages, 76 KB, Original
VP0610T
Temic Semiconductors
VP0610T
VP0610T.pdf4 Pages, 61 KB, Original
VP0610T
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET

Product Details Search Results:

Americanmicrosemi.com/VP0610T
{"Status":"Active"}...
710 Bytes - 17:35:47, 18 December 2024
Atmel.com/VP0610T
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Qualification Status":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"R-PDSO-G3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1449 Bytes - 17:35:47, 18 December 2024
Calogic.net/VP0610T
{"Status":"Transferred","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Power Dissipation-Max (Abs)":"0.3600 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.1200 A","Sub Category":"Other Transistors","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"YES"}...
1025 Bytes - 17:35:47, 18 December 2024
Calogic.net/VP0610TT1
{"Terminal Form":"GULL WING","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"R-PDSO-G3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"YES","Operat...
1403 Bytes - 17:35:47, 18 December 2024
Calogic.net/VP0610TT2
{"Terminal Form":"GULL WING","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"R-PDSO-G3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"YES","Operat...
1403 Bytes - 17:35:47, 18 December 2024
Exar.com/VP0610T
{"Status":"Discontinued","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Power Dissipation-Max (Abs)":"0.3600 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.1200 A","Sub Category":"Other Transistors","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"YES"}...
1033 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"RECTANGULAR","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"240","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10...
1738 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T-1T1
{"Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"R-PDSO-G3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Number of Terminals":"3","Operating Temperature-Max":"150 Cel","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Qualification Status":"COMMERCIAL","Feedback Cap-Max (Crss)":"5 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"...
1429 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T-1T2
{"Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"R-PDSO-G3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Number of Terminals":"3","Operating Temperature-Max":"150 Cel","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Qualification Status":"COMMERCIAL","Feedback Cap-Max (Crss)":"5 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"...
1428 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T-2T1
{"Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"R-PDSO-G3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Number of Terminals":"3","Operating Temperature-Max":"150 Cel","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Qualification Status":"COMMERCIAL","Feedback Cap-Max (Crss)":"5 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"...
1427 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T-2T2
{"Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"R-PDSO-G3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Number of Terminals":"3","Operating Temperature-Max":"150 Cel","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Qualification Status":"COMMERCIAL","Feedback Cap-Max (Crss)":"5 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"...
1431 Bytes - 17:35:47, 18 December 2024
Vishay.com/VP0610T-E3
{"Terminal Form":"GULL WING","Qualification Status":"COMMERCIAL","Package Shape":"RECTANGULAR","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"R-PDSO-G3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...
1540 Bytes - 17:35:47, 18 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
QRF0610T30.pdf0.071Request
QRC0610T30.pdf0.071Request
QRD0610T30.pdf0.071Request
LC1K0610T7.pdf9.331Request