VP0610T
120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

From Vishay Intertechnology, Inc.

StatusDiscontinued
Additional FeatureLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.1200 A
Drain-source On Resistance-Max10 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
JEDEC-95 CodeTO-236AB
JESD-30 CodeR-PDSO-G3
JESD-609 Codee0
Mfr Package DescriptionTO-236, 3 PIN
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)240
Polarity/Channel TypeP-CHANNEL
Qualification StatusCOMMERCIAL
Surface MountYES
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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