VP0610T
120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236

From Atmel Corporation

StatusDiscontinued
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.1200 A
Drain-source On Resistance-Max10 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
JEDEC-95 CodeTO-236
JESD-30 CodeR-PDSO-G3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Polarity/Channel TypeP-CHANNEL
Qualification StatusCOMMERCIAL
Surface MountYES
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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