Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1.6 A","Channel Type":"N-CHANNEL","FET Technology":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.7V @ 250\u00b5A","Package / Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Current - Continuous Drain (Id) @ 25\u00b0C":"400mA (Tc)","Gate Charge (Qg) @ Vgs":"10nC @ 10V","Product Photos":"TO-92-3","Rds On (Max) @ Id, Vgs":"8.5 Ohm @ 500mA, 10V","Datasheets":"STx1(H)NK60(-1,R)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,000","Other Related Documents":"STQ1HNK60R View All Specifications","...

{"Polarity":"N","Continuous Drain Current":"0.4(A)","Mounting":"Through Hole","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b130(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"TO-92","Drain-Source On-Res":"8.5 ohm","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","Drai...