STQ1HNK60R 0.4 A, 600 V, 8.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
From STMicroelectronics, Inc.
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 25 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V |
| Drain Current-Max (ID) | 0.4000 A |
| Drain-source On Resistance-Max | 8.5 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | TO-92, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Pulsed Drain Current-Max (IDM) | 1.6 A |
| Terminal Finish | MATTE TIN |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
