Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"27A","Switching Energy":"150\u00b5J (on), 250\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 12A","Voltage - Collector Emitter Breakdown (Max)":"600V","Td (on/off) @ 25\u00b0C":"26ns/150ns","Input Type":"Standard","Package / Case":"TO-3P-3, SC-65-3","Gate Charge":"51nC","Product Photos":"TO-3P-3,TO-247-3","PCN Design/Specification":"Plating Material 20/Dec/2007","Reverse Recovery Time (trr)":"-","Datasheets":"HGTG12N60B3",...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"120 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type"...

{"Status":"Discontinued","V(BR)GES (V)":"20","t(d)off Max. (s) Off time":"295n","V(CE)sat Max.(V)":"2.1","Absolute Max. Power Diss. (W)":"104","V(BR)CES (V)":"600","I(C) Abs.(A) Collector Current":"27","@I(C) (A) (Test Condition)":"12","t(r) Max. (s) Rise time":"23n","t(f) Max. (s) Fall time.":"175n","I(GES) Max. (A)":"250n","V(GE)th Max. (V)":"6.0","I(CES) Max. (A)":"250u","Package":"TO-262AA","@V(GE) (Test Condition)":"15","td(on) Max (s) On time delay":"22n"}...

{"Status":"Discontinued","V(BR)GES (V)":"20","t(d)off Max. (s) Off time":"150n","V(CE)sat Max.(V)":"2.1","Absolute Max. Power Diss. (W)":"104","V(BR)CES (V)":"600","I(C) Abs.(A) Collector Current":"27","@I(C) (A) (Test Condition)":"12","t(r) Max. (s) Rise time":"23n","t(f) Max. (s) Fall time.":"62n","I(GES) Max. (A)":"250n","V(GE)th Max. (V)":"6.0","I(CES) Max. (A)":"250u","Package":"TO-262AA","@V(GE) (Test Condition)":"15","td(on) Max (s) On time delay":"26n"}...

{"Collector Current (DC) ":"6 A","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600 V","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"\ufffd20 V","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-252","Configuration":"Single","Pin Count":"2 +Tab"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"24A","Switching Energy":"500\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 12A","Td (on/off) @ 25\u00b0C":"20ns/150ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"32nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"-","Datasheets":"IXG(A,P)12N60B","Standard Package":"50","Test Condition":"480V, 12A,...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"24A","Switching Energy":"500\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 12A","Td (on/off) @ 25\u00b0C":"20ns/150ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"32nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"-","Datasheets":"IXG(A,P)12N60B","Standard Package":"50","Test Condition":"-","PCN Ob...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"24A","Switching Energy":"500\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 12A","Td (on/off) @ 25\u00b0C":"20ns/150ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"32nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"-","Datasheets":"IXGH12N60B","Standard Package":"30","Test Condition":"480V, 12A, 18 Ohm, 15V","PCN Obsolescence/ EOL"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"24A","Switching Energy":"500\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 12A","Td (on/off) @ 25\u00b0C":"20ns/150ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"32nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"35ns","Datasheets":"IXGH12N60BD1","Standard Package":"30","Test Condition":"480V, 12A, 18 Ohm, 15V","PCN Obsolescence/...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Switching Energy":"800\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.5V @ 15V, 32A","Td (on/off) @ 25\u00b0C":"25ns/100ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"125nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"-","Datasheets":"IXGH32N60B","Standard Package":"30","Test Condition":"480V, 32A, 4.7 Ohm, 15V","PCN Obsolescence/ EO...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Switching Energy":"600\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.3V @ 15V, 32A","Td (on/off) @ 25\u00b0C":"25ns/100ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"110nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"25ns","Datasheets":"IXG(H,T)32N60B(D1)","Standard Package":"30","Test Condition":"480V, 32A, 4.7 Ohm, 15V","PCN Obsol...

{"V(BR)GES (V)":"20","t(d)off Max. (s) Off time":"200n","V(CE)sat Max.(V)":"2.5","Absolute Max. Power Diss. (W)":"200","V(BR)CES (V)":"600","I(C) Abs.(A) Collector Current":"60","@I(C) (A) (Test Condition)":"32","t(r) Max. (s) Rise time":"30n","t(f) Max. (s) Fall time.":"175n","I(GES) Max. (A)":"100n","V(GE)th Max. (V)":"5.0","I(CES) Max. (A)":"200u","Package":"TO-247SMD","@V(GE) (Test Condition)":"15","td(on) Max (s) On time delay":"25n"}...