HGT1S12N60B3
N-Channel IGBT

From Harris Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)12
@V(GE) (Test Condition)15
Absolute Max. Power Diss. (W)104
I(C) Abs.(A) Collector Current27
I(CES) Max. (A)250u
I(GES) Max. (A)250n
PackageTO-262AA
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)2.1
V(GE)th Max. (V)6.0
t(d)off Max. (s) Off time295n
t(f) Max. (s) Fall time.175n
t(r) Max. (s) Rise time23n
td(on) Max (s) On time delay22n

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