Product Datasheet Search Results:
12 Pages, 903 KB, Original- NESG2101M16-T3-A
- Cel
- TRANS NPN 2GHZ M16 - NESG2101M16-T3-A
2 Pages, 83 KB, Original- NESG2101M16-T3
- Nec Electronics
- NPN SiGe high frequency transistor.
2 Pages, 83 KB, Original- NESG2101M16-T3
- Renesas Electronics
- L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
15 Pages, 262 KB, Original- NESG2101M16-T3-A
- Renesas Electronics
- L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
7 Pages, 62 KB, Original- NESG2101M16-T3FB
- Renesas Electronics
- L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
15 Pages, 262 KB, Original- NESG2101M16-T3FB-A
- Renesas Electronics
- L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
15 Pages, 262 KB, Original- NESG2101M16-T3YFB-A
- Renesas Electronics
- L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
Product Details Search Results:
Cel.com/NESG2101M16-T3-A
{"Continuous Collector Current":"100 mA","Emitter- Base Voltage VEBO":"1.5 V","Product Category":"RF Bipolar Transistors","Transistor Polarity":"NPN","Factory Pack Quantity":"10000","DC Collector/Base Gain hfe Min":"130","Pd - Power Dissipation":"190 mW","Packaging":"Reel","Collector- Emitter Voltage VCEO Max":"5 V","Mounting Style":"SMD/SMT","Frequency":"2 GHz","Package / Case":"M16","Transistor Type":"Bipolar","Configuration":"Single","Technology":"SiGe","Brand":"CEL","RoHS":"Details","Manufacturer":"CEL"...
1598 Bytes - 07:05:28, 16 November 2024
Renesas.com/NESG2101M16-T3
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"0.5000 pF","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEADLESS MINIMOLD, M16, 1208, 6 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"5 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"17000 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Transistor Element Material":"SILIC...
1437 Bytes - 07:05:28, 16 November 2024
Renesas.com/NESG2101M16-T3-A
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.1000 A","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON GERMANIUM","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"5 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-ba...
1510 Bytes - 07:05:28, 16 November 2024
Renesas.com/NESG2101M16-T3FB
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"0.5000 pF","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"MINIMOLD, M16, 1208, 6 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"5 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"17000 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Transistor Element Material":"SILICON GERMAN...
1443 Bytes - 07:05:28, 16 November 2024
Renesas.com/NESG2101M16-T3FB-A
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"0.5000 pF","Terminal Finish":"TIN BISMUTH","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"5 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"17000 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Transistor Element Ma...
1476 Bytes - 07:05:28, 16 November 2024
Renesas.com/NESG2101M16-T3YFB-A
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"0.5000 pF","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"5 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"17000 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Transistor Element Material":"SILICON GERMANIUM","Ter...
1450 Bytes - 07:05:28, 16 November 2024
Documentation and Support
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| VOFA-L26-T32C-M-G14-1C1-ANP.pdf | 1.54 | 1 | Request | |
| VOFA-L26-T32C-M-G14-1C1-APP.pdf | 1.54 | 1 | Request | |
| VOFA-L26-T32C-MZ-G14-1C1-APP.pdf | 0.23 | 1 | Request |
