NESG2101M16-T3-A RF Bipolar Transistors NPN High Frequency
From CEL
| Brand | CEL |
| Collector- Emitter Voltage VCEO Max | 5 V |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 130 |
| Emitter- Base Voltage VEBO | 1.5 V |
| Factory Pack Quantity | 10000 |
| Frequency | 2 GHz |
| Manufacturer | CEL |
| Mounting Style | SMD/SMT |
| Package / Case | M16 |
| Packaging | Reel |
| Pd - Power Dissipation | 190 mW |
| Product Category | RF Bipolar Transistors |
| RoHS | Details |
| Technology | SiGe |
| Transistor Polarity | NPN |
| Transistor Type | Bipolar |
