Product Datasheet Search Results:

IRFY9120M.pdf1 Pages, 36 KB, Scan
IRFY9120M
International Rectifier
5.3 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120M.pdf1 Pages, 36 KB, Scan
IRFY9120M
International Rectifier
5.3 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120ME.pdf33 Pages, 1029 KB, Scan
IRFY9120ME
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEA.pdf33 Pages, 1029 KB, Scan
IRFY9120MEA
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEAPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120MEAPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEB.pdf33 Pages, 1029 KB, Scan
IRFY9120MEB
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEBPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120MEBPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEC.pdf33 Pages, 1029 KB, Scan
IRFY9120MEC
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MECPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120MECPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MED.pdf33 Pages, 1029 KB, Scan
IRFY9120MED
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEDPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120MEDPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120MEPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120MEPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB

Product Details Search Results:

Irf.com/IRFY9120M
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1379 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120ME
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1406 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1415 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1480 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1413 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1482 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1413 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1482 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1413 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1479 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MEPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1474 Bytes - 05:54:21, 28 November 2024
Irf.com/IRFY9120MPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V"...
1446 Bytes - 05:54:21, 28 November 2024

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