Product Datasheet Search Results:
- IRFY9120MEB
- International Rectifier
- 5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
- IRFY9120MEBPBF
- International Rectifier
- 5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
Product Details Search Results:
Irf.com/IRFY9120MEB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1413 Bytes - 04:25:17, 01 December 2024
Irf.com/IRFY9120MEBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1482 Bytes - 04:25:17, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IRFY9240.pdf | 0.14 | 1 | Request |