Product Datasheet Search Results:

IRFY9120E.pdf33 Pages, 1029 KB, Scan
IRFY9120E
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EA.pdf33 Pages, 1029 KB, Scan
IRFY9120EA
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EAPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120EAPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EB.pdf33 Pages, 1029 KB, Scan
IRFY9120EB
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EBPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120EBPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EC.pdf33 Pages, 1029 KB, Scan
IRFY9120EC
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120ECPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120ECPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120ED.pdf33 Pages, 1029 KB, Scan
IRFY9120ED
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EDPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120EDPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
IRFY9120EPBF.pdf33 Pages, 1029 KB, Scan
IRFY9120EPBF
International Rectifier
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB

Product Details Search Results:

Irf.com/IRFY9120E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1401 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1409 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1475 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1407 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1474 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1409 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1473 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120ED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"21 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUAR...
1409 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1474 Bytes - 12:31:11, 24 November 2024
Irf.com/IRFY9120EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"21 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1468 Bytes - 12:31:11, 24 November 2024

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