IRFY9120EAPBF 5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
From International Rectifier
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 5.3 A |
Drain-source On Resistance-Max | 0.6900 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | SQUARE |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 21 A |
Terminal Finish | NOT SPECIFIED |
Terminal Form | PIN/PEG |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |