Product Datasheet Search Results:
12 Pages, 998 KB, Original- IPB029N06N3GE8187ATMA1
- Infineon Technologies
- MOSFET N-Ch 60V 120A D2PAK-2
Product Details Search Results:
Infineon.com/IPB029N06N3GE8187ATMA1
{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"53 nC","Mounting Style":"SMD/SMT","Series":"IPB029N06","Brand":"Infineon Technologies","Id - Continuous Drain Current":"120 A","Vgs th - Gate-Source Threshold Voltage":"2 V","Pd - Power Dissipation":"188 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"2.9 mOhms","Package / Case":"TO-263-3","Vgs - Gate-Source Breakdown Voltage":"20 V","Part ...
1629 Bytes - 15:52:49, 30 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB029N06N3G.pdf | 0.97 | 1 | Request |
