IPB029N06N3GE8187ATMA1 MOSFET N-Ch 60V 120A D2PAK-2
From Infineon Technologies
| Brand | Infineon Technologies |
| Factory Pack Quantity | 1000 |
| Id - Continuous Drain Current | 120 A |
| Manufacturer | Infineon |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Part # Aliases | SP000939334 |
| Pd - Power Dissipation | 188 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 53 nC |
| Rds On - Drain-Source Resistance | 2.9 mOhms |
| RoHS | Details |
| Series | IPB029N06 |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
