Product Datasheet Search Results:
- IPB029N06N3G
- Infineon Technologies Ag
- 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
- IPB029N06N3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
- IPB029N06N3GE8187ATMA1
- Infineon Technologies
- MOSFET N-Ch 60V 120A D2PAK-2
Product Details Search Results:
Infineon.com/IPB029N06N3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"235 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0032 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","China...
1637 Bytes - 06:07:31, 27 November 2024
Infineon.com/IPB029N06N3GATMA1
{"Product Category":"MOSFET","Series":"XPB029N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1151 Bytes - 06:07:31, 27 November 2024
Infineon.com/IPB029N06N3GE8187ATMA1
{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"53 nC","Mounting Style":"SMD/SMT","Series":"IPB029N06","Brand":"Infineon Technologies","Id - Continuous Drain Current":"120 A","Vgs th - Gate-Source Threshold Voltage":"2 V","Pd - Power Dissipation":"188 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"2.9 mOhms","Package / Case":"TO-263-3","Vgs - Gate-Source Breakdown Voltage":"20 V","Part ...
1629 Bytes - 06:07:31, 27 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IPB029N06N3G.pdf | 0.97 | 1 | Request |