Product Datasheet Search Results:
4 Pages, 195 KB, Scan- FS10VS-6-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 300 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 195 KB, Scan- FS10VS-6-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 300 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 50 KB, Original- FS10VS-6
- Mitsubishi Electric Semiconductor
- Nch POWER MOSFET
1 Pages, 58 KB, Scan- FS10VS-6
- Powerex, Inc. - Pa
- 10 A, 300 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS10VS-6-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1498 Bytes - 09:10:16, 01 November 2024
Mitsubishichips.com/FS10VS-6-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1499 Bytes - 09:10:16, 01 November 2024
Pwrx.com/FS10VS-6
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surface Mount":"Yes","Cas...
1398 Bytes - 09:10:16, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT4.pdf | 0.27 | 1 | Request | |
| FS100R07N2E4.pdf | 0.50 | 1 | Request | |
| FS100R12KT4G_B11.pdf | 0.29 | 1 | Request | |
| FS100R12KS4.pdf | 0.26 | 1 | Request | |
| FS100R07N3E4.pdf | 0.50 | 1 | Request | |
| FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT3.pdf | 0.32 | 1 | Request | |
| FS100R07PE4.pdf | 0.99 | 1 | Request | |
| FS10R06XL4.pdf | 0.23 | 1 | Request | |
| FS10R12VT3.pdf | 0.24 | 1 | Request | |
| FS100R12PT4.pdf | 0.57 | 1 | Request |
