Product Datasheet Search Results:

FS10VS-6-T1.pdf4 Pages, 195 KB, Scan
FS10VS-6-T1
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 300 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FS10VS-6-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1498 Bytes - 09:05:17, 01 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
FS100R07N3E4_B11.pdf0.511Request
FS100R12KT4.pdf0.271Request
FS100R07N2E4.pdf0.501Request
FS100R12KT4G_B11.pdf0.291Request
FS100R12KS4.pdf0.261Request
FS100R07N3E4.pdf0.501Request
FS100R07N2E4_B11.pdf0.511Request
FS100R12KT3.pdf0.321Request
FS100R07PE4.pdf0.991Request
FS10R06XL4.pdf0.231Request
FS10R12VT3.pdf0.241Request
FS100R12PT4.pdf0.571Request