Product Datasheet Search Results:
4 Pages, 131 KB, Original- BFY193
- Infineon Technologies
- TRANS RF NPN 12V 80MA MICRO-X1 - BFY193 (P)
4 Pages, 174 KB, Original- BFY193C
- Infineon Technologies Ag
- L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
4 Pages, 131 KB, Original- BFY193ES
- Infineon Technologies Ag
- L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
5 Pages, 31 KB, Original- BFY193 (ES)
- Infineon Technologies
- HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 12.0 V; I<sub>C</sub>(max): 80.0 mA; P<sub>tot</sub> (max): 580.0 mW; f<sub>T</sub> (typ): 8.0 GHz;
4 Pages, 131 KB, Original- BFY193H
- Infineon Technologies Ag
- L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
4 Pages, 131 KB, Original- BFY193P
- Infineon Technologies Ag
- L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
4 Pages, 131 KB, Original- BFY193 (P)
- Infineon Technologies
- TRANS RF NPN 12V 80MA MICRO-X1 - BFY193 (P)
4 Pages, 131 KB, Original- BFY193S
- Infineon Technologies Ag
- L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
5 Pages, 31 KB, Original- BFY193-SN (S)
- Infineon Technologies
- HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; V<sub>CEO</sub> (max): 12.0 V; I<sub>C</sub>(max): 80.0 mA; P<sub>tot</sub> (max): 580.0 mW; f<sub>T</sub> (typ): 8.0 GHz;
5 Pages, 96 KB, Original- BFY193
- Siemens Semiconductors
- HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)
5 Pages, 96 KB, Original- BFY193ES
- Siemens Semiconductors
- HiRel NPN silicon RF transistor
5 Pages, 96 KB, Original- BFY193H
- Siemens Semiconductors
- HiRel NPN silicon RF transistor
Product Details Search Results:
Infineon.com/BFY193C
{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.7500 pF","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED, MICRO-X1-4","Terminal Form":"FLAT","Package Style":"DISK BUTTON","Collector Current-Max (IC)":"0.0800 A","Collector-emitter Voltage-Max":"12 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"8 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Case Connection":"EMITTER","Transistor Element Material":"SILICON","Terminal Position...
1368 Bytes - 18:55:01, 26 November 2024
Infineon.com/BFY193ES
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.0800 A","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"UNSPECIFIED","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-Max":"0.7500 pF","Case Co...
1435 Bytes - 18:55:01, 26 November 2024
Infineon.com/BFY193H
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.0800 A","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"UNSPECIFIED","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-Max":"0.7500 pF","Case Co...
1423 Bytes - 18:55:01, 26 November 2024
Infineon.com/BFY193P
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.0800 A","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"UNSPECIFIED","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-Max":"0.7500 pF","Case Co...
1429 Bytes - 18:55:01, 26 November 2024
Infineon.com/BFY193 (P)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"80mA","Noise Figure (dB Typ @ f)":"2.3dB ~ 2.9dB @ 2GHz","Transistor Type":"NPN","Frequency - Transition":"7.5GHz","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"12V","Supplier Device Package":"MICRO-X1","Packaging":"Bulk","Datasheets":"BFY193","Power - Max":"580mW","Gain":"12.5dB ~ 13.5dB","Package / Case":"MICRO-X1","Mounting Type":"Surface Mount","DC Current ...
1383 Bytes - 18:55:01, 26 November 2024
Infineon.com/BFY193S
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.0800 A","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"UNSPECIFIED","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-Max":"0.7500 pF","Case Co...
1427 Bytes - 18:55:01, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7B10C151Y193G1.pdf | 0.06 | 1 | Request | |
| 7B10E184Y193G1.pdf | 0.07 | 1 | Request | |
| 7B10E566Y193G1.pdf | 0.04 | 1 | Request | |
| 7B10L317Y193G1.pdf | 0.04 | 1 | Request | |
| 7B10E820Y193G1.pdf | 0.04 | 1 | Request | |
| 7B10F154Y193G2.pdf | 0.07 | 1 | Request | |
| 7B10P057Y193G4.pdf | 0.04 | 1 | Request |
