BFY193ES L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | EMITTER |
| Collector Current-Max (IC) | 0.0800 A |
| Collector-base Capacitance-Max | 0.7500 pF |
| Collector-emitter Voltage-Max | 12 V |
| Configuration | SINGLE |
| Highest Frequency Band | L BAND |
| Mfr Package Description | HERMETIC SEALED, MICRO-X-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | UNSPECIFIED |
| Package Style | MICROWAVE |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | FLAT |
| Terminal Position | UNSPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF SMALL SIGNAL |
| Transition Frequency-Nom (fT) | 8000 MHz |
