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2 Pages, 44 KB, Original

APT5010B2

Advanced Power Technology

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

4 Pages, 68 KB, Original

APT5010B2FLL

Advanced Power Technology

N-Channel enhancement mode power MOSFET

2 Pages, 47 KB, Original

APT5010B2L

Advanced Power Technology

500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET

4 Pages, 66 KB, Original

APT5010B2LC

Advanced Power Technology

POWER MOS VI 500V 47A 0.100 Ohm

2 Pages, 47 KB, Original

APT5010B2LL

Advanced Power Technology

POWER MOS 7 500V 46A 0.100 Ohm

4 Pages, 48 KB, Original

APT5010B2VFR

Advanced Power Technology

High voltage N-Channel enhancement mode power MOSFET

4 Pages, 44 KB, Original

APT5010B2VR

Advanced Power Technology

N-Channel enhancement mode power MOSFET

5 Pages, 174 KB, Original

APT5010B2FLL

Microsemi Corp.

46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

40 Pages, 1959 KB, Original

APT5010B2FLLG

Microsemi

MOSFET N-CH 500V 46A T-MAX - APT5010B2FLLG

5 Pages, 174 KB, Original

APT5010B2LL

Microsemi Corp.

46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

5 Pages, 174 KB, Original

APT5010B2LLG

Microsemi

MOSFET N-CH 500V 46A T-MAX - APT5010B2LLG

4 Pages, 177 KB, Scan

APT5010B2VFR

Microsemi Corp.

47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Microsemi.com/APT5010B2FLL

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1600 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"46 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"184 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

1486 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2FLLG

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"T-MAX Pkg","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 2.5mA","Series":"POWER MOS 7\u00ae","Standard Package":"30","Supplier Device Package":"T-MAX\u2122 [B2]","Datasheets":"APT5010(B2,L)FLL Power Products Catalog","Rds On (Max) @ Id, Vgs":"100 mOhm @ 23A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"520W","Package / Case":"TO-247-3 ...

1953 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2LL

1476 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2LLG

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"T-MAX Pkg","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 2.5mA","Series":"POWER MOS 7\u00ae","Standard Package":"30","Supplier Device Package":"T-MAX\u2122 [B2]","Datasheets":"APT5010(B2,L)LL Power Products Catalog","Rds On (Max) @ Id, Vgs":"100 mOhm @ 23A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"520W","Package / Case":"TO-247-3 V...

1942 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2VFR

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"188 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 ...

1462 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2VFRG

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"188 A","Channel Type":"N-CHAN...

1564 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2VR

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"188 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

1488 Bytes - 09:26:56, 03 January 2025

Microsemi.com/APT5010B2VRG

1545 Bytes - 09:26:56, 03 January 2025

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