Product Datasheet Search Results:
4 Pages, 44 KB, Original- APT5010B2VR
- Advanced Power Technology
- N-Channel enhancement mode power MOSFET
4 Pages, 172 KB, Scan- APT5010B2VR
- Microsemi Corp.
- 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 44 KB, Original- APT5010B2VRG
- Microsemi
- MOSFET N-CH 500V 47A T-MAX - APT5010B2VRG
Product Details Search Results:
Microsemi.com/APT5010B2VR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"188 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1488 Bytes - 09:15:41, 03 January 2025
Microsemi.com/APT5010B2VRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"188 A","Channel Type":"N-CHAN...
1545 Bytes - 09:15:41, 03 January 2025
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