{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"29 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...