AP1203GMA
47 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Avalanche Energy Rating (Eas)29 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)47 A
Drain-source On Resistance-Max0.0120 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT, APAK-5
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)120 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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