Product Datasheet Search Results:

AP1203GM.pdf5 Pages, 201 KB, Original
AP1203GM
Advanced Power Electronics Corp. Usa
11.2 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
AP1203GMA.pdf4 Pages, 61 KB, Original
AP1203GMA
Advanced Power Electronics Corp. Usa
47 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP1203GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1488 Bytes - 02:35:12, 29 November 2024
A-power.com.tw/AP1203GMA
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"29 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"47 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Tr...
1520 Bytes - 02:35:12, 29 November 2024

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