Product Datasheet Search Results:
12 Pages, 59 KB, Original- 2SK3150S
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 89 KB, Original- 2SK3150STL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
14 Pages, 76 KB, Original- 2SK3150S
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 110 KB, Original- 2SK3150S-E
- Renesas Technology
- Trans MOSFET N-CH Si 100V 20A 3-Pin(2+Tab) LDPAK(S)-1
11 Pages, 110 KB, Original- 2SK3150STL-E
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK3150S
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surfa...
1422 Bytes - 16:50:25, 27 November 2024
Renesas.com/2SK3150S-E
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"20(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"50(W)","Operating Temp Range":"-55C to 150C","Package Type":"LDPAK(S)-1","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1480 Bytes - 16:50:25, 27 November 2024
Renesas.com/2SK3150STL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1529 Bytes - 16:50:25, 27 November 2024
