2SK3150STL-E
20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)20 A
Drain-source On Resistance-Max0.0850 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionSC-83, LDPAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)80 A
Surface MountYes
Terminal FinishTIN BISMUTH
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links