Product Datasheet Search Results:
- 2SK2013Y
- Toshiba America Electronic Components, Inc.
- 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/2SK2013Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Drain Current-Max (ID)":"1 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SIN...
1348 Bytes - 03:23:56, 06 October 2024