Product Datasheet Search Results:
- 2SK2013Y
- Toshiba America Electronic Components, Inc.
- 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/2SK2013Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Drain Current-Max (ID)":"1 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SING...
1348 Bytes - 15:20:37, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2SK2035.pdf | 0.28 | 1 | Request | |
2SK2034.pdf | 0.31 | 1 | Request | |
2SK2009.pdf | 0.27 | 1 | Request | |
2SK2037.pdf | 0.29 | 1 | Request | |
2SK2036.pdf | 0.31 | 1 | Request | |
2SK2033.pdf | 0.28 | 1 | Request | |
CA2SK20M7.pdf | 2.75 | 1 | Request | |
CA2SK20G7.pdf | 2.75 | 1 | Request | |
CA2SK20U7.pdf | 2.75 | 1 | Request | |
CA2SK20F7.pdf | 2.75 | 1 | Request | |
CA2SK20P7.pdf | 2.75 | 1 | Request | |
CA2SK20E7.pdf | 2.75 | 1 | Request |