Product Datasheet Search Results:

2SK2013Y.pdf3 Pages, 111 KB, Scan
2SK2013Y
Toshiba America Electronic Components, Inc.
1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Toshiba.co.jp/2SK2013Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Drain Current-Max (ID)":"1 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SING...
1348 Bytes - 15:20:37, 28 November 2024

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
2SK2035.pdf0.281Request
2SK2034.pdf0.311Request
2SK2009.pdf0.271Request
2SK2037.pdf0.291Request
2SK2036.pdf0.311Request
2SK2033.pdf0.281Request
CA2SK20M7.pdf2.751Request
CA2SK20G7.pdf2.751Request
CA2SK20U7.pdf2.751Request
CA2SK20F7.pdf2.751Request
CA2SK20P7.pdf2.751Request
CA2SK20E7.pdf2.751Request