2SK2013Y 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 180 V |
| Drain Current-Max (ID) | 1 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
