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7 Pages, 405 KB, Original

JANTX2N6849U

Infineon Technologies Ag

Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC

7 Pages, 405 KB, Original

2N6849UJANS

International Rectifier

Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39

7 Pages, 960 KB, Original

2N6849UJANTX

International Rectifier

Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC

7 Pages, 405 KB, Original

2N6849UJANTXV

International Rectifier

Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC

8 Pages, 123 KB, Original

JANS2N6849U

International Rectifier

6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET

7 Pages, 200 KB, Original

JANTX2N6849U

International Rectifier

6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET

7 Pages, 200 KB, Original

JANTXV2N6849U

International Rectifier

6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET

4 Pages, 145 KB, Original

2N6849U

Microsemi Corporation

P Channel MOSFET;

Product Details Search Results:

Infineon.com/JANTX2N6849U

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...

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Irf.com/2N6849UJANS

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

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Irf.com/2N6849UJANTX

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

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Irf.com/2N6849UJANTXV

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

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Irf.com/JANS2N6849U

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

1551 Bytes - 15:31:18, 03 January 2025

Irf.com/JANTX2N6849U

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

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Irf.com/JANTXV2N6849U

1558 Bytes - 15:31:18, 03 January 2025

Microsemi.com/2N6849U

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 4.1A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain...

1561 Bytes - 15:31:18, 03 January 2025

Microsemi.com/JAN2N6849U

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/564","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","...

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Microsemi.com/JANS2N6849U

1540 Bytes - 15:31:18, 03 January 2025

Microsemi.com/JANTX2N6849U

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power / Military MOSFETs","Package / Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849U","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Vo...

1881 Bytes - 15:31:18, 03 January 2025

Microsemi.com/JANTXV2N6849U

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