Product Datasheet Search Results:

JANS2N6849U.pdf8 Pages, 123 KB, Original
JANS2N6849U
International Rectifier
6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET
JANS2N6849U.pdf8 Pages, 642 KB, Original
JANS2N6849U
Microsemi Corp.
6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/JANS2N6849U
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1551 Bytes - 15:32:00, 03 January 2025
Microsemi.com/JANS2N6849U
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1540 Bytes - 15:32:00, 03 January 2025

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