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ZVN1210L.pdf1 Pages, 123 KB, Scan
ZVN1210L
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Semiconductor Master Cross Reference Guide

Product Details Search Results:

Americanmicrosemi.com/VN1210L
{"Status":"Active"}...
710 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Drain Current-Max (Abs) (ID)":"0.2300 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source ...
1759 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP001
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1472 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP002
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1469 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEMEN...
1432 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP004
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1470 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP005
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1472 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP006
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1470 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP007
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1470 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP008
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1470 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP011
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1472 Bytes - 20:35:10, 17 November 2024
Supertex.com/VN1210LP012
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1471 Bytes - 20:35:10, 17 November 2024

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