Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-236AB (SOT23)","PCN Assembly/Origin":"Qualification Supertex Devices 22/Jul/2014 Additional Fabrication Site 03/Sep/2014 Qualification Report Revision 29/Jan/2015 Fab Site Addition 14/Aug/2014","PCN Design/Specification":"Die Attach Material Update 22/J...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.36(W)","Continuous Drain Current":"0.12(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"RECTANGULAR","Additional Feature":"LOW THRESHOLD","Status":"Active","Package Style":"SMALL OUTLINE","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Feedback Cap-Max (Crss)":"8 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Dra...