Product Datasheet Search Results:

VP2106N3-G.pdf1 Pages, 256 KB, Original
VP2106N3.pdf4 Pages, 32 KB, Original
VP2106N3
Supertex, Inc.
P-Channel Enhancement-Mode Vertical DMOS FETs
VP2106N3-G.pdf5 Pages, 259 KB, Original

Product Details Search Results:

Americanmicrosemi.com/VP2106N3
{"Status":"Active"}...
716 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP2106","Rds On (Max) @ Id, Vgs":"12 Ohm @ 500mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000","PCN...
1782 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"5 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typi...
1615 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G P003
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"5 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typi...
1619 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G P005
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1351 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G P013
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"5 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typi...
1615 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G P014
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"5 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typi...
1617 Bytes - 06:36:22, 18 November 2024
Microchip.com/VP2106N3-G
617 Bytes - 06:36:22, 18 November 2024
Supertex.com/VP2106N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Feedback Cap-Max (Crss)":"8 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DI...
1784 Bytes - 06:36:22, 18 November 2024
Supertex.com/VP2106N3-G
530 Bytes - 06:36:22, 18 November 2024
Supertex.com/VP2106N3-GP002
554 Bytes - 06:36:22, 18 November 2024
Supertex.com/VP2106N3-GP003
556 Bytes - 06:36:22, 18 November 2024

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