Taiwansemi.com/TSM1N80SCTA3
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"1 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"90 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transis...
1487 Bytes - 22:38:24, 26 June 2024