TSM1N80SCTA3
0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92

From Taiwan Semiconductor Co., Ltd.

StatusDISCONTINUED
Avalanche Energy Rating (Eas)90 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800 V
Drain Current-Max (ID)0.3000 A
Drain-source On Resistance-Max21.6 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)1 A
Terminal FormTHROUGH-HOLE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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