Product Datasheet Search Results:

STSJ3NM50.pdf8 Pages, 151 KB, Original
STSJ3NM50
Stmicroelectronics, Inc.
0.63 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

St.com/STSJ3NM50
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.6300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transisto...
1465 Bytes - 06:25:16, 28 November 2024

Documentation and Support

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