Product Datasheet Search Results:
5 Pages, 226 KB, Original- SSM3K103TU
- Toshiba America Electronic Components, Inc.
- 2400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Toshiba.co.jp/SSM3K103TU
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tr...
1517 Bytes - 05:38:01, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SSM3K101TU.pdf | 0.15 | 1 | Request | |
| SSM3K105TU.pdf | 0.25 | 1 | Request | |
| SSM3K102TU.pdf | 0.15 | 1 | Request | |
| SSM3K107TU.pdf | 0.16 | 1 | Request | |
| SSM3K106TU.pdf | 0.14 | 1 | Request | |
| SSM3K104TU.pdf | 0.15 | 1 | Request |
