Datasheet.Directory

{"Package":"SO","Vsup Nom.(V) Supply Voltage":"3.3","Military":"N","Pins":"8","Maximum Clock Frequency (Hz)":"310M"}...

{"Status":"ACTIVE","Operating Temperature-Min":"-30 Cel","Operating Temperature-Max":"80 Cel","Shape":"RECTANGULAR","Output Current-Max":"20 A","Optoelectronic Device Type":"LOGIC OUTPUT","Application":"ENCODER","Infrared Range":"Yes","Size":"5 mm","Number of Functions":"1","Configuration":"COMPLEX","Operating Supply Voltage-Min":"4.5 V"}...

{"Status":"DISCONTINUED","Contact Finish - Mating":"TIN LEAD","Contact Finish - Termination":"TIN LEAD","Number of Rows Loaded":"2","Terminal Pitch":"2 mm","Option":"GENERAL PURPOSE","Mounting Type":"BOARD","Contact Gender":"MALE","Mounting Style":"STRAIGHT","Total Number of Contacts":"90","Manufacturer Series":"M22","Termination Type":"SURFACE MOUNT","Connection Type":"TWO PART BOARD CONNECTOR","Contact Material":"NOT SPECIFIED"}...

{"Category":"RF/IF and RFID","Frequency Group":"UHF (300 MHz ~ 1 GHz)","Frequency Range":"450MHz ~ 470MHz","Ingress Protection":"-","Number of Bands":"1","Mounting Type":"Bracket Mount","Antenna Type":"Yagi, 6-Element","Series":"-","Height (Max)":"44.000\" (111.76cm)","Packaging":"*","Applications":"-","Power - Max":"-","Family":"RF Antennas","Frequency (Center/Band)":"460MHz","Standard Package":"1","Gain":"10.2dBd","Termination":"Connector, N Female","VSWR":"1.5","Return Loss":"-","Features":"-"}...

{"Category":"NPN Transistor, Transistor","Amps":"1A","MHz":"<1 MHz","Volts":"450V"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0044 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Configuration":"Single","Mounting Type":"Chassis Mount","Family":"IGBTs - Modules","Current - Collector Cutoff (Max)":"1mA","Series":"-","Package / Case":"Module","Vce(on) (Max) @ Vge, Ic":"3.9V @ 15V, 67A","Voltage - Collector Emitter Breakdown (Max)":"4500V","Supplier Device Package":"Module","Datasheets":"QIS4506001","Power - Max":"-","Standard Package":"3","Input":"Standard","Input Capacitance (Cies) @ Vce":"9nF @ 10V"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Configuration":"Single","Mounting Type":"Chassis Mount","Family":"IGBTs - Modules","Current - Collector Cutoff (Max)":"1mA","Series":"-","Package / Case":"Module","Vce(on) (Max) @ Vge, Ic":"3.9V @ 15V, 67A","Voltage - Collector Emitter Breakdown (Max)":"4500V","Supplier Device Package":"Module","Datasheets":"QIS4506002","Power - Max":"-","Standard Package":"3","Input":"Standard","Input Capacitance (Cies) @ Vce":"9nF @ 10V"...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"1mA @ 4500V","Voltage - Forward (Vf) (Max) @ If":"6.2V @ 60A","Family":"Diodes, Rectifiers - Single","Standard Package":"4","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"-","Reverse Recovery Time (trr)":"230ns","Datasheets":"QRS4506001","Current - Average Rectified (Io)":"60A","Operating Temperature - Junction":"-55\u00b0C ~ 150\u00b0C","Package / Case":"3-FLATLEAD","Voltage - DC Reverse (V...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"1mA @ 4500V","Voltage - Forward (Vf) (Max) @ If":"6.2V @ 60A","Family":"Diodes, Rectifiers - Single","Standard Package":"5","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"-","Reverse Recovery Time (trr)":"230ns","Datasheets":"QRS4506002","Current - Average Rectified (Io)":"60A","Operating Temperature - Junction":"-55\u00b0C ~ 150\u00b0C","Package / Case":"3-SMD Module","Voltage - DC Reverse ...

{"Status":"Discontinued","C1/C2 Min. Capacitance Ratio":"5.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2000","Package":"Pill-B","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"2.7p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"Status":"Discontinued","C1/C2 Min. Capacitance Ratio":"5.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2000","Package":"Axial-E","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"2.7p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...