Product Datasheet Search Results:
- RA30H1317M
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M-01
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M-101
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M1-101
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M1-201
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M-E01
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA30H1317M
- Mitsubishi Electric Semiconductor
- 135-175MHz 30W 12.5V MOBILE RADIO
- RA30H1317M-01
- Mitsubishi Electric Semiconductor
- 135-175MHz 30W 12.5V MOBILE RADIO
- RA30H1317M1
- Mitsubishi Electric Semiconductor
- RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
- RA30H1317M-101
- Mitsubishi Electric Semiconductor
- RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
- RA30H1317M1-101
- Mitsubishi Electric Semiconductor
- RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
- RA30H1317M-E01
- Mitsubishi Electric Semiconductor
- 135-175MHz 30W 12.5V MOBILE RADIO
Product Details Search Results:
Mitsubishichips.com/RA30H1317M
{"Status":"ACTIVE","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"110 Cel","Operating Frequency-Min":"135 MHz","Construction":"MODULE","VSWR-Max":"3","Input Power-Max (CW)":"20 dBm"}...
1109 Bytes - 20:37:21, 28 November 2024
Mitsubishichips.com/RA30H1317M-01
{"Status":"DISCONTINUED","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"66 X 21 MM, 9.88 MM HEIGHT, H2S, 4 PIN","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"110 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","VSWR-Max":"3","Input Power-Max (CW)":"20 dBm"}...
1204 Bytes - 20:37:21, 28 November 2024
Mitsubishichips.com/RA30H1317M-101
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Characteristic Impedance":"50 ohm","Mfr Package Description":"ROHS COMPLIANT, H2S, 4 PIN","Operating Temperature-Min":"-30 Cel","Operating Frequency-Max":"175 MHz","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"110 Cel","Operating Frequency-Min":"135 MHz","Construction":"MODULE","EU RoHS Compliant":"Yes","VSWR-Max":"3","Input Power-Max (CW)":"20 dBm"}...
1269 Bytes - 20:37:21, 28 November 2024
Mitsubishichips.com/RA30H1317M1-101
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Characteristic Impedance":"50 ohm","Mfr Package Description":"66 X 21 MM, 9.88 MM HEIGHT, ROHS COMPLIANT, H2S, 5 PIN","Operating Temperature-Min":"-30 Cel","Operating Frequency-Max":"175 MHz","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"100 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","EU RoHS Compliant":"Yes","VSWR-Max":"20","Input Power-Max (CW)":"20 dBm"}...
1304 Bytes - 20:37:21, 28 November 2024
Mitsubishichips.com/RA30H1317M1-201
{"Status":"ACTIVE","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"ROHS COMPLIANT, H2M, 5 PIN","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"100 Cel","Operating Frequency-Min":"135 MHz","Construction":"MODULE","VSWR-Max":"3","Input Power-Max (CW)":"20 dBm"}...
1197 Bytes - 20:37:21, 28 November 2024
Mitsubishichips.com/RA30H1317M-E01
{"Status":"DISCONTINUED","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"66 X 21 MM, 9.88 MM HEIGHT, H2S, 4 PIN","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"110 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","VSWR-Max":"3","Input Power-Max (CW)":"20 dBm"}...
1210 Bytes - 20:37:21, 28 November 2024
Mitsubishi_semiconductor/RA30H1317M1-501
1009 Bytes - 20:37:21, 28 November 2024