Product Datasheet Search Results:
11 Pages, 641 KB, Original- PTFB210801FAV1
- Infineon Technologies
- FET RF LDMOS 80W H37265-2 - PTFB210801FA V1 R250
11 Pages, 641 KB, Original- PTFB210801FAV1R250
- Infineon Technologies Ag
- S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Infineon.com/PTFB210801FAV1
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"GREEN, CERAMIC, H-37265-2, 2 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLATPACK","Transistor Application":"AMPLIFIER","Highest Frequency Band":"S BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Pac...
1366 Bytes - 17:12:53, 08 January 2025
Infineon.com/PTFB210801FAV1R250
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"GREEN, CERAMIC, H-37265-2, 2 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLATPACK","Transistor Application":"AMPLIFIER","Highest Frequency Band":"S BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Pac...
1393 Bytes - 17:12:53, 08 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| NFAV141-S50.pdf | 8.12 | 1 | Request |
