PTFB210801FAV1R250 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 65 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | S BAND |
| Mfr Package Description | GREEN, CERAMIC, H-37265-2, 2 PIN |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLATPACK |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
