Product Datasheet Search Results:

PTFB193404FV1R250.pdf14 Pages, 239 KB, Original
PTFB193404FV1R250
Infineon Technologies Ag
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Infineon.com/PTFB193404FV1R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1496 Bytes - 12:13:54, 01 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
NCA1R250-0200.pdf4.461Request
NCDA1R250-0150.pdf4.461Request
NCA1R250-0400.pdf4.461Request
NCDA1R250-0250-XB5.pdf4.461Request
NCDA1R250-0100.pdf4.461Request
NCDA1R250-0400.pdf4.461Request
NCDA1R250-2000.pdf4.461Request
NCA1R250-2000-IM.pdf4.461Request
NCA1R250-0300.pdf4.461Request
NCDA1R250-0300.pdf4.461Request
NCDA1R250-0600.pdf4.461Request
NCDA1R250-0500.pdf4.461Request