Product Datasheet Search Results:

PTFB193404FV1.pdf14 Pages, 239 KB, Original
PTFB193404FV1
Infineon Technologies Ag
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
PTFB193404FV1R250.pdf14 Pages, 239 KB, Original
PTFB193404FV1R250
Infineon Technologies Ag
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Infineon.com/PTFB193404FV1
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1474 Bytes - 09:29:38, 01 December 2024
Infineon.com/PTFB193404FV1R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1496 Bytes - 09:29:38, 01 December 2024
Infineon.com/PTFB193404FV1XWSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Description":"Value","Channel Mode":"Enhancement","Maximum Gate Source Voltage":"-6 to 10 V","Mounting":"Surface Mount","Package":"7Case 37275","Operating Temperature":"-40 to 200 \u00b0C","RDS-on":"50@10V mOhm","Manufacturer":"Infineon Technologies"}...
1392 Bytes - 09:29:38, 01 December 2024

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