Datasheet.Directory

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr ...

{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","PCN Design\/Specification":"Resin Hardener 02\/Jul\/2013","Voltage - Cutoff (VGS off) @ Id":"2V @ 1\u00b5A","Datasheets":"PMBFJ308,309,310","FET Type":"N-Channel","PCN Packaging":"Date Code Extended 18\/Jul\/2013 Lighter Reels 02\/Jan\/2014","Voltage - Breakdown (V(BR)GSS)":"25V","Drain to Source Voltage (Vdss)":"25V","Standard Package":"1","PCN Obsolescence...

{"Category":"JFET","Maximum Drain Source Voltage":"25 V","Description":"Value","Maximum Gate Source Voltage":"-25 V","Mounting":"Surface Mount","Package":"3TO-236AB","Operating Temperature":"-65 to 150 \u00b0C","Configuration":"Single","Manufacturer":"NXP Semiconductors"}...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Oper...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Oper...

{"C(iss) Max. (F)":"5.0p","Absolute Max. Power Diss. (W)":"250m","@V(GS) (V) (Test Condition)":"15.0","r(DS)on Max. (Ohms)":"50","@V(DS) (V) (Test Condition)":"10.0","V(GS)off Min. (V)":"2.0","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25.0","@I(D) (A) (Test Condition)":"10.0m","Package":"TO-236","I(DSS) Min. (A)":"24m","Military":"N","V(GS)off Max. (V)":"6.5","I(G) Max. (A)":"50.0m","I(DSS) Max. (A)":"60m","V(BR)DSS (V)":"25.0","g(fs) Min. (S) Trans. conduct.":"12.0m"}...