PMBFJ310T/R
N-Channel JFET

From Philips Semiconductors / NXP Semiconductors

@I(D) (A) (Test Condition)10.0m
@V(DS) (V) (Test Condition)10.0
@V(GS) (V) (Test Condition)15.0
Absolute Max. Power Diss. (W)250m
C(iss) Max. (F)5.0p
I(DSS) Max. (A)60m
I(DSS) Min. (A)24m
I(G) Max. (A)50.0m
I(GSS) Max. (A)1.0n
MilitaryN
PackageTO-236
V(BR)DSS (V)25.0
V(BR)GSS (V)25.0
V(GS)off Max. (V)6.5
V(GS)off Min. (V)2.0
g(fs) Min. (S) Trans. conduct.12.0m
r(DS)on Max. (Ohms)50

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