Product Datasheet Search Results:

PMBFJ309T/R.pdf1 Pages, 38 KB, Original
PMBFJ309T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
PMBFJ309.pdf15 Pages, 122 KB, Original
PMBFJ309
Nxp Semiconductors
JFET N-CH 25V 30MA SOT23 - PMBFJ309,215
PMBFJ309,215.pdf15 Pages, 122 KB, Original
PMBFJ309,215
Nxp Semiconductors
JFET N-CH 25V 30MA SOT23 - PMBFJ309,215
PMBFJ309TRL.pdf9 Pages, 339 KB, Scan
PMBFJ309TRL
Nxp
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
PMBFJ309TRL13.pdf9 Pages, 339 KB, Scan
PMBFJ309TRL13
Nxp
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
PMBFJ309.pdf10 Pages, 245 KB, Original
PMBFJ309
Philips Semiconductors / Nxp Semiconductors
P-Channel Silicon Field-Effect Transistor
PMBFJ309TR.pdf12 Pages, 66 KB, Original
PMBFJ309TR
Philips Semiconductors / Nxp Semiconductors
N-channel silicon field-effect transistor

Product Details Search Results:

Nxp.com/PMBFJ309
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr P...
1435 Bytes - 04:55:14, 29 November 2024
Nxp.com/PMBFJ309,215
{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","PCN Design/Specification":"Resin Hardener 02/Jul/2013","Voltage - Cutoff (VGS off) @ Id":"1V @ 1\u00b5A","Datasheets":"PMBFJ308,309,310","FET Type":"N-Channel","PCN Packaging":"Lighter Reels 02/Jan/2014","Voltage - Breakdown (V(BR)GSS)":"25V","Drain to Source Voltage (Vdss)":"25V","Standard Package":"1","Online Catalog":"N-Channel JFETs","Mounting Type":"Surf...
1812 Bytes - 04:55:14, 29 November 2024
Nxp.com/PMBFJ309TRL
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Opera...
1401 Bytes - 04:55:14, 29 November 2024
Nxp.com/PMBFJ309TRL13
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Opera...
1413 Bytes - 04:55:14, 29 November 2024
Semiconductors.philips.com/PMBFJ309T/R
{"C(iss) Max. (F)":"5.0p","Absolute Max. Power Diss. (W)":"250m","@V(GS) (V) (Test Condition)":"15.0","r(DS)on Max. (Ohms)":"50","@V(DS) (V) (Test Condition)":"10.0","V(GS)off Min. (V)":"1.0","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25.0","@I(D) (A) (Test Condition)":"10.0m","Package":"TO-236","I(DSS) Min. (A)":"12m","Military":"N","V(GS)off Max. (V)":"4.0","I(G) Max. (A)":"50.0m","I(DSS) Max. (A)":"30m","V(BR)DSS (V)":"25.0","g(fs) Min. (S) Trans. conduct.":"12.0m"}...
1031 Bytes - 04:55:14, 29 November 2024

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