PMBFJ309T/R N-Channel JFET
From Philips Semiconductors / NXP Semiconductors
| @I(D) (A) (Test Condition) | 10.0m |
| @V(DS) (V) (Test Condition) | 10.0 |
| @V(GS) (V) (Test Condition) | 15.0 |
| Absolute Max. Power Diss. (W) | 250m |
| C(iss) Max. (F) | 5.0p |
| I(DSS) Max. (A) | 30m |
| I(DSS) Min. (A) | 12m |
| I(G) Max. (A) | 50.0m |
| I(GSS) Max. (A) | 1.0n |
| Military | N |
| Package | TO-236 |
| V(BR)DSS (V) | 25.0 |
| V(BR)GSS (V) | 25.0 |
| V(GS)off Max. (V) | 4.0 |
| V(GS)off Min. (V) | 1.0 |
| g(fs) Min. (S) Trans. conduct. | 12.0m |
| r(DS)on Max. (Ohms) | 50 |
