Product Datasheet Search Results:

PMBFJ308T/R.pdf1 Pages, 40 KB, Original
PMBFJ308T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
PMBFJ308.pdf15 Pages, 122 KB, Original
PMBFJ308
Nxp Semiconductors
JFET N-CH 25V 12MA SOT23 - PMBFJ308,215
PMBFJ308,215.pdf15 Pages, 122 KB, Original
PMBFJ308,215
Nxp Semiconductors
JFET N-CH 25V 12MA SOT23 - PMBFJ308,215
PMBFJ308@215.pdf27 Pages, 1617 KB, Original
PMBFJ308TRL.pdf9 Pages, 339 KB, Scan
PMBFJ308TRL
Nxp
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
PMBFJ308TRL13.pdf9 Pages, 339 KB, Scan
PMBFJ308TRL13
Nxp
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
PMBFJ308.pdf10 Pages, 245 KB, Original
PMBFJ308
Philips Semiconductors / Nxp Semiconductors
P-Channel Silicon Field-Effect Transistor
PMBFJ308TR.pdf12 Pages, 66 KB, Original
PMBFJ308TR
Philips Semiconductors / Nxp Semiconductors
N-channel silicon field-effect transistor

Product Details Search Results:

Nxp.com/PMBFJ308
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr P...
1435 Bytes - 04:55:25, 29 November 2024
Nxp.com/PMBFJ308,215
{"Category":"Discrete Semiconductor Products","Packaging":"Tape & Reel (TR)","Product Photos":"SOT-23-3","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"12mA @ 10V","Series":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Supplier Device Package":"SOT-23 (TO-236AB)","Voltage - Cutoff (VGS off) @ Id":"1V @ 1\u00b5A","Input Capacitance (Ciss) @ Vds":"5pF @ 10V","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"PMBFJ308,309,310","Power - Max":"250mW","Standa...
1649 Bytes - 04:55:25, 29 November 2024
Nxp.com/PMBFJ308@215
847 Bytes - 04:55:25, 29 November 2024
Nxp.com/PMBFJ308TRL
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Opera...
1398 Bytes - 04:55:25, 29 November 2024
Nxp.com/PMBFJ308TRL13
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Opera...
1411 Bytes - 04:55:25, 29 November 2024
Semiconductors.philips.com/PMBFJ308T/R
{"C(iss) Max. (F)":"5.0p","Absolute Max. Power Diss. (W)":"250m","@V(GS) (V) (Test Condition)":"15.0","r(DS)on Max. (Ohms)":"50","@V(DS) (V) (Test Condition)":"10.0","V(GS)off Min. (V)":"1.0","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25.0","@I(D) (A) (Test Condition)":"10.0m","Package":"TO-236","I(DSS) Min. (A)":"12m","Military":"N","V(GS)off Max. (V)":"6.5","I(G) Max. (A)":"50.0m","I(DSS) Max. (A)":"60m","V(BR)DSS (V)":"25.0","g(fs) Min. (S) Trans. conduct.":"13m"}...
1029 Bytes - 04:55:25, 29 November 2024

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